Silicon Carbide (SiC) Devices and Power Modules
Silicon Carbide (SiC) semiconductors are innovative, new options for improving system efficiency, supporting higher operating temperatures and reducing costs in your power electronic designs. The next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high-repetitive Unclamped Inductive Switching (UIS) capability and excellent gate oxide shielding and channel integrity for robust operation. SiC MOSFET and SiC SBD die can be paired for use in power modules with various topologies.
Benefits:
- Improved system efficiency with lower switching losses
- Higher power density for similar power topologies
- Higher operating temperature
- Reduced cooling needs, smaller filters and passives
- Higher switching frequency
- Ten times lower Failure In Time (FIT) rate for neutron susceptibility than comparable Insulated Gate Bipolar Transistors (IGBTs) at rated voltages
- Extremely low parasitic (stray) inductance at < 2.9 nH in SiC modules
Features:
- Wide range of 700V, 1200V, and 1700V SiC products to support a variety of markets and applications
- Higher SiC power density vs. silicon enables smaller magnetics, transformers, filters and passives, resulting in a compact form factor
- SiC products can be combined with other Microchip devices, including 8-, 16- and 32-bit microcontrollers, power management devices, analog sensors, touch and gesture controllers and wireless connectivity solutions, to create a total system and lower overall system costs
Categories
- SiC Schottky Barrier Diodes (SBDs)
- SiC MOSFETs
- SiC Power Modules
- SiC Diode Modules
- SiC MOSFET Modules
- Digital Programmable Gate Drivers