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Silicon Carbide (SiC) Devices and Power Modules

Silicon Carbide (SiC) semiconductors are innovative, new options for improving system efficiency, supporting higher operating temperatures and reducing costs in your power electronic designs. The next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high-repetitive Unclamped Inductive Switching (UIS) capability and excellent gate oxide shielding and channel integrity for robust operation. SiC MOSFET and SiC SBD die can be paired for use in power modules with various topologies.


  • Improved system efficiency with lower switching losses
  • Higher power density for similar power topologies
  • Higher operating temperature
  • Reduced cooling needs, smaller filters and passives
  • Higher switching frequency
  • Ten times lower Failure In Time (FIT) rate for neutron susceptibility than comparable Insulated Gate Bipolar Transistors (IGBTs) at rated voltages
  • Extremely low parasitic (stray) inductance at < 2.9 nH in SiC modules


  • Wide range of 700V, 1200V, and 1700V SiC products to support a variety of markets and applications
  • Higher SiC power density vs. silicon enables smaller magnetics, transformers, filters and passives, resulting in a compact form factor
  • SiC products can be combined with other Microchip devices, including 8-, 16- and 32-bit microcontrollers, power management devices, analog sensors, touch and gesture controllers and wireless connectivity solutions, to create a total system and lower overall system costs


  • SiC Schottky Barrier Diodes (SBDs)
  • SiC Power Modules
    • SiC Diode Modules
    • SiC MOSFET Modules
  • Digital Programmable Gate Drivers

SiC Schottky Barrier Diodes

The silicon carbide (SiC) power Schottky Barrier Diode (SBD) product line from Microchip increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications.

Product Portfolio Summary

VoltageProduct NameForward CurrentForward VoltageJunction TemperaturePackage Type
12-381.5-55 – 1750CSOT-227, TO-247, TO-268
12-1001.5-55 – 1750CSOT-227, TO-220, TO-247, TO-268
10-1001.5-55 – 1750CSOT-227, TO-220, TO-247, TO-268


The silicon carbide (SiC) power MOSFET product line from Microchip increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications.

Product Portfolio Summary

VoltageProduct NameContinuous Drain CurrentJunction TemperatureOn-State-ResistancePackage Type
18 – 99-55 – 1750C15 – 90TO-247, TO-247-4L, TO-268
1200VMOSFET-SiC-1200V25 – 90-55 – 1750C17.6 – 80SOT-227, TO-247, TO-247-4L, TO-268
1700VMOSFET-SiC-1700V4 – 48-55 – 1750C35 – 750SOT-227, TO-247, TO-247-4L, TO-268

SiC Diode Modules

Microchip SiC diode modules maximize switching efficiency, reduce thermal rise, and allow for a smaller system footprint.

Product Portfolio Summary

STD ConfigurationsVoltageCurrent (A)
Tc=80 C
3 phase bridge700V50SP1
Dual common cathode100 to 200D1P
Full bridge50 to 200SP1, SOT227 & SP6C
Phase leg100 to 600D1P & SP6C
3 phase bridge1200V50SP1
Dual common cathode100 to 200D1P
Full bridge50 to 200SP1, SOT227 & SP6C
Phase leg100 to 600D1P & SP6C
3 phase bridge1700V50SP1
Dual common cathode100 to 200D1P
Full bridge50 to 200SP1, SOT227 & SP6C
Phase leg100 to 600D1P & SP6C

SiC MOSFET Modules

Microchip SiC modules combine are optimized for reliability, efficiency, space-saving, and reduced assembly time. They are supported by tools and reference designs, and offer outstanding ruggedness proven through rigorous testing.

Product Portfolio Summary

STD Configurations Voltage RDS(on) (mR) Current (A) Tc=80 C Package
3 phase bridge 700V 15 97 SP3F
Boost Chopper 15 97 SOT227
Buck Chopper 15 97 SOT227
Full bridge 15 97 SP3F
Phase leg 15 to 2.5 97 to 538 SP1, SP3F, D3, SP6C & SP6LI
Triple phase leg 7.5 to 5 186 to 273 SP6P
Vienna phase leg 15 to 7.5 97 SP3F & SP4
3 phase bridge 1200V 25 71 SP3F
Boost chopper 40 to 11 44 to 202 SOT227 & SP3F
Buck chopper 40 to 11 44 to 202 SOT227 & SP3F
Full bridge 40 to 12.5 44 to 138 SP3F
Phase leg 40 to 2.1 44 to 754 SP1, SP3F, D3, SP6C & SP6LI
Triple phase leg 12.5 to 8.33 136 to 200 SP6P
3 phase bridge 1700V 35 50 SP3F
Triple phase leg 17.5 to 11.7 96 to 140 SP6P
Phase leg 2.9 to 35 50 to 530 SP1, SP3F, D3, SP6C & SP6LI
Full bridge 35 to 17.5 50 to 97 SP3F

Digital Programmable Gate Drivers

The AgileSwitch family of digital programmable gate drivers was designed to address the critical challenges that emerge in operating SiC and IGBT power devices at high switching frequencies. They are optimized for transportation and industrial applications including heavy-duty vehicles, auxiliary power units, charging, storage, inverters and induction heating.

SiC Gate Driver Cores
These high-performance and compact SiC cores offer advanced monitoring and fault reporting to enable better control and protection of most SiC MOSFET-based power systems.
Key Features:
  • Software configurable ±Vgs gate voltages
  • Patented Augmented Switching technology
  • Robust short circuit protection
  • High immunity to noise
  • Module adapter boards for most popular SiC MOSFET modules

SiC Plug-and-Play Gate Drivers
SiC MOSFETs need to be controlled the right way. Turn-off spikes, ringing and DSAT can permanently damage an expensive SiC device. AgileSwitch drivers control, monitor and protect your system with Augmented Switching technology and up to seven fault notifications and protections.
Key Features:
  • Compatible with 62 mm SIC MOSFET modules
  • Software configurable to meet requirements of your application
  • Automotive-grade components
  • High immunity to noise
  • Temperature and isolated high-voltage monitoring

IGBT Gate Drivers
Our gate drivers are faster, more efficient and more reliable than competitive devices. They are RoHS and UL compliant and use automotive-grade components.
Key Features:
  • Two-level turn-off time and voltage level
  • Desaturation time and voltage level
  • Gate drive voltage +15V/−10V
  • Peak gate current ±30A
  • Suitable for IGBTs up to 3300V
  • Single-channel, 7W output power