Important SiC Parameters for Efficient, Stable Designs
Compare SiC MOSFETs for Power Designs
The choice of a SiC MOSFET goes beyond RDSon. Learn how temperature drift, threshold voltage range, gate charge ratio, and body diode robustness affect efficiency and switching behaviour in demanding designs.
This guide covers important SiC MOSFET parameters for real-world power systems. Learn how RDSon temperature stability increases efficiency, tight threshold voltage tolerance enables balanced parallel operation, and optimized gate charge ratios prevent false turn-on.
See how gate driver voltage affects switching losses and lifetime, and why a low forward voltage of the body diode and Qrr improve efficiency in bridge topologies.
Download this Whitepaper to Learn More About:
- Influence of RDSon temperature drift on power losses
- Why a low threshold voltage tolerance ensures parallel operation
- Role of gate charge ratio for switching stability
- Influence of gate driver voltage on losses/lifetime
- Influence/effect of forward voltage of the body diode and Qrr
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