Efficient Power Conversion with GaN Devices
Achieving 80% Lower Losses with GaN Power Devices
Power conversion inefficiencies generate excessive heat and system complexity across industrial applications. GaN FETs achieve 99% efficiency, slashing power losses from 10kW to 2kW while reducing cooling requirements and system weight by 50%.
Growing demands for electrification and CO2 reduction require revolutionary improvements in power conversion efficiency. Traditional silicon-based solutions struggle with power losses that impact system performance, weight, and cooling requirements.
Gallium nitride field-effect transistors offer superior efficiency compared to Si and SiC alternatives, achieving up to 99% conversion efficiency. This technology enables significant reductions in power losses, system complexity, and thermal management requirements across automotive, data center, telecom, and industrial applications.
Download this Whitepaper to Learn More About:
- Evaluate GaN vs Si/SiC: Compare real efficiency gains and switching speeds
- Reduce losses by 80%: Learn calculation methods for your power systems
- Implement GaN designs: Practical integration for maximum efficiency
- Optimize thermal systems: Calculate exact cooling requirement reductions
- Apply best practices: Based on application requirements
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